電阻式記憶體感測元件

The Resistive random-access memory sensor element is provided, which includes a first electrode, an insulation layer has a first recess disposed in the first electrode, a resistance conversion layer is disposed on a surface of the insulation layer and on an inner surface of the first recess so as to form a second recess, a second electrode disposed on the insulation layer and disposed within the second recess, a sensing film disposed on the second electrode and a third recess is formed therein to expose the portion surface of the second electrode, and a photoresist layer disposed on the sensing film and a fourth recess is formed therein to expose the portion surface of the sensing film, and a fifth recess is formed to align the second recess and a portion of surface of the second electrode is to be exposed.