電阻式記憶體裝置

A resistive memory device includes a non-volatile memory unit and a driving circuit. The non-volatile memory unit is operable in one of a transistor mode and a memory mode based on first and second voltage signals generated by the driving circuit. When the first voltage signal has a first bias voltage while the second voltage signal serves as a control signal, the non-volatile memory unit is in the transistor mode, where the non-volatile memory unit is operable to be conducting or non-conducting in response to the control signal. When the non-volatile memory unit operating in the memory mode conducts while the first and second voltage signals become a grounded potential and a second bias voltage, respectively, the non-volatile memory unit switches, in response to the second bias voltage and the grounded potential, to the memory mode, where the non-volatile memory unit performs one of a setting operation and a reset operation based on the second bias voltage.