Abstract
一般而言，經過高劑量的離子佈植後，光阻焦化以致於除不易；更槽的是，當光阻去除不完全而又逕行實施回火程序時，光阻將進一步嚴重焦化，更難以將其自晶片表面剝離。鑑於以往去光阻法之不完全，本文提出一種包括以piranha etch及丙峒震盪清洗的交互程序，它沒有複雜的配方，也沒有乾式去光阻法中的電漿損害，即可剝除經高離子濃度佈植後燒焦的光阻；甚至被30KeV 5×1015cm-2及50KeV 1×1015cm-2連續兩次錢劑量的佈植，再外加500℃ RTA回火後嚴重焦化的光阻，也能完全去除。
A wet process for stripping photoresist from a semiconductor device during the manufacturing process and after high does ion implantation or rapid thermal anneal is describe. The implant-hardened or thermal-hardened surface of the photoresist is first stripped by pranha etch solution at a higher tempaeature (100~130℃). Then, the semiconductor wafer is cleaned by acetone solution to completely remove remaining contaiminant and photoresist residuals. This two-step wet process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes.
A wet process for stripping photoresist from a semiconductor device during the manufacturing process and after high does ion implantation or rapid thermal anneal is describe. The implant-hardened or thermal-hardened surface of the photoresist is first stripped by pranha etch solution at a higher tempaeature (100~130℃). Then, the semiconductor wafer is cleaned by acetone solution to completely remove remaining contaiminant and photoresist residuals. This two-step wet process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes.
| Original language | Chinese (Traditional) |
|---|---|
| Pages (from-to) | 47-51 |
| Journal | 材料科學與工程 |
| Volume | 32 |
| Issue number | 2 |
| State | Published - 2000 |