高線性度及高功率CMOS結構及其製造方法

The invention provides a high-linearity, high-power CMOS structure and manufacturing method thereof, which is aimed at the structure of a CMOS component and particularly points to the application of the field plate technology on the CMOS component, wherein the field plate grows onto the dielectric layer of CMOS component and is located above the gate/drain. The present invention provides the electric field energy to greatly improve the linearity and output power characteristics of the CMOS component in radio frequency.