高速化合物半導體近期之發展與應用

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@article{00a83157d9ea4c86b5498756a55ae732,

title = "高速化合物半導體近期之發展與應用",

keywords = "GaAs, GaN, HBT, HEMT, InP, 氮化鎵, 異質接面雙極性電晶體, 砷化鎵, 磷化銦, 高電子移導率場效電晶體",

author = "Hsien-Chin Chiu",

year = "2009",

language = "繁體中文",

volume = "16",

pages = "26--34",

journal = "奈米通訊",

issn = "1209-502X",

number = "4",

}

TY - JOUR

T1 - 高速化合物半導體近期之發展與應用

AU - Chiu, Hsien-Chin

PY - 2009

Y1 - 2009

KW - GaAs

KW - GaN

KW - HBT

KW - HEMT

KW - InP

KW - 氮化鎵

KW - 異質接面雙極性電晶體

KW - 砷化鎵

KW - 磷化銦

KW - 高電子移導率場效電晶體

M3 - 文章

SN - 1209-502X

VL - 16

SP - 26

EP - 34

JO - 奈米通訊

JF - 奈米通訊

IS - 4

ER -