高電子移導率場效電晶體裝置

A high electron mobility field-effect transistor device is disclosed. It is to connect a plurality of low-power flip chip type high electron mobility field-effect transistors with the input end and output end in parallel or tree-structured series- parallel combined connection manner, and to control the distance between high electron mobility field-effect transistors, and to control the distance between input end and output end to be isometric so as to make both the power and the distribution of the current uniform, and enable the heat energy to be dispersed easily. It further includes a surge relief protection layer such as zinc oxide amorphous layer or polycrystalline layer. By the mechanism of rapid collapsed Schottky barrier in high electric field on grain boundary, device thereon can be protected to work normally, and the efficiency or service life of the device can be further raised.