Abstract
The present invention provides a method for preparing a p-type transparent conductive thin film comprising steps of utilizing a ceramic target of zinc oxide doped with IIIA group elements, and introducing a reactive gas of nitrogen-containing element and a working gas of argon in the sputtering process such that the reactive gas and the IIIA group elements in the ceramic target are deposited over the substrate after performing co-doping mechanism, thereby obtaining the p-type transparent conductive thin film with low electric resistance. Accordingly, the whole property of the p-type transparent conductive thin film is substantially enhanced to form a good pn junction together with the n-type transparent conductive thin film, thereby spreading the application.
Translated title of the contribution | Method for preparing p-type transparent conductive thin film |
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Original language | Chinese (Traditional) |
IPC | C23C 14/34(2006.01); C23C 14/08(2006.01); H01B 5/14(2006.01) |
State | Published - 16 09 2011 |
Bibliographical note
公開公告號: 2.01130999E8Announcement ID: 2.01130999E8