p型透明導電薄膜的製備方法

Translated title of the contribution: Method for preparing p-type transparent conductive thin film

Hsin-Chun Lu (Inventor), QI-ZHEN LIU (Inventor), RUO-LING LV (Inventor), JI-YOU LAI (Inventor), JUN-LONG ZHU (Inventor)

Research output: Patent

Abstract

The present invention provides a method for preparing a p-type transparent conductive thin film comprising steps of utilizing a ceramic target of zinc oxide doped with IIIA group elements, and introducing a reactive gas of nitrogen-containing element and a working gas of argon in the sputtering process such that the reactive gas and the IIIA group elements in the ceramic target are deposited over the substrate after performing co-doping mechanism, thereby obtaining the p-type transparent conductive thin film with low electric resistance. Accordingly, the whole property of the p-type transparent conductive thin film is substantially enhanced to form a good pn junction together with the n-type transparent conductive thin film, thereby spreading the application.
Translated title of the contributionMethod for preparing p-type transparent conductive thin film
Original languageChinese (Traditional)
IPCC23C 14/34(2006.01); C23C 14/08(2006.01); H01B 5/14(2006.01)
StatePublished - 16 09 2011

Bibliographical note

公開公告號: 2.01130999E8
Announcement ID: 2.01130999E8

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