0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

Hsien Chin Chiu; Shih Cheng Yang; Cheng Kuo Lin; Ming Jyh Hwu; Yi Jen Chan

doi:10.1109/TED.2003.814987

0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

Hsien Chin Chiu^*, Shih Cheng Yang, Cheng Kuo Lin, Ming Jyh Hwu, Yi Jen Chan

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A C-band In_0.49Ga_0.51P-In_0.15Ga _0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε = 2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.

Original language	English
Pages (from-to)	1599-1603
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TED.2003.814987
State	Published - 2003
Externally published	Yes

Keywords

Benzocyclobutene (BCB)
Doped-channel FET (DCFET)
MMIC amplifiers
T-gates

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10.1109/TED.2003.814987

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title = "0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications",

abstract = "A C-band In0.49Ga0.51P-In0.15Ga 0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε = 2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.",

keywords = "Benzocyclobutene (BCB), Doped-channel FET (DCFET), MMIC amplifiers, T-gates",

author = "Chiu, {Hsien Chin} and Yang, {Shih Cheng} and Lin, {Cheng Kuo} and Hwu, {Ming Jyh} and Chan, {Yi Jen}",

year = "2003",

doi = "10.1109/TED.2003.814987",

language = "英语",

volume = "50",

pages = "1599--1603",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - 0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

AU - Chiu, Hsien Chin

AU - Yang, Shih Cheng

AU - Lin, Cheng Kuo

AU - Hwu, Ming Jyh

AU - Chan, Yi Jen

PY - 2003

Y1 - 2003

N2 - A C-band In0.49Ga0.51P-In0.15Ga 0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε = 2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.

AB - A C-band In0.49Ga0.51P-In0.15Ga 0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε = 2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.

KW - Benzocyclobutene (BCB)

KW - Doped-channel FET (DCFET)

KW - MMIC amplifiers

KW - T-gates

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U2 - 10.1109/TED.2003.814987

DO - 10.1109/TED.2003.814987

M3 - 文章

AN - SCOPUS:0042527375

SN - 0018-9383

VL - 50

SP - 1599

EP - 1603

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

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Keywords

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