1.3-μm GaInAsN Vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation

Feng Ming Lee; Chia Lung Tsai; Chih Wei Hu; Kun Fu Huang; Meng Chyi Wu; Sun Chien Ko

doi:10.1109/LED.2006.889512

1.3-μm GaInAsN Vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation

Feng Ming Lee^*, Chia Lung Tsai, Chih Wei Hu, Kun Fu Huang, Meng Chyi Wu, Sun Chien Ko

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

In this letter, we investigate and characterize the 1.3-μ single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-μm-diameter surface-relief aperture and a 12-μm-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 °C and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA.

Original language	English
Pages (from-to)	120-122
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/LED.2006.889512
State	Published - 02 2007

Keywords

GaInAsN
Planar-type vertical-cavity surface-emitting lasers (VCSELs)
SiO planarization process
Surface relief

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@article{e365e48b7412406097e1ad18c084d3de,

title = "1.3-μm GaInAsN Vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation",

abstract = "In this letter, we investigate and characterize the 1.3-μ single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-μm-diameter surface-relief aperture and a 12-μm-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 °C and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA.",

keywords = "GaInAsN, Planar-type vertical-cavity surface-emitting lasers (VCSELs), SiO planarization process, Surface relief",

author = "Lee, {Feng Ming} and Tsai, {Chia Lung} and Hu, {Chih Wei} and Huang, {Kun Fu} and Wu, {Meng Chyi} and Ko, {Sun Chien}",

year = "2007",

month = feb,

doi = "10.1109/LED.2006.889512",

language = "英语",

volume = "28",

pages = "120--122",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - 1.3-μm GaInAsN Vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation

AU - Lee, Feng Ming

AU - Tsai, Chia Lung

AU - Hu, Chih Wei

AU - Huang, Kun Fu

AU - Wu, Meng Chyi

AU - Ko, Sun Chien

PY - 2007/2

Y1 - 2007/2

N2 - In this letter, we investigate and characterize the 1.3-μ single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-μm-diameter surface-relief aperture and a 12-μm-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 °C and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA.

AB - In this letter, we investigate and characterize the 1.3-μ single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-μm-diameter surface-relief aperture and a 12-μm-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 °C and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA.

KW - GaInAsN

KW - Planar-type vertical-cavity surface-emitting lasers (VCSELs)

KW - SiO planarization process

KW - Surface relief

UR - http://www.scopus.com/inward/record.url?scp=33847378399&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.889512

DO - 10.1109/LED.2006.889512

M3 - 文章

AN - SCOPUS:33847378399

SN - 0741-3106

VL - 28

SP - 120

EP - 122

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

1.3-μm GaInAsN Vertical-cavity surface-emitting lasers by oxide-planarized and surface-relief processes for single-mode operation

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Keywords

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