1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

Y. Qian; Z. H. Zhu; Y. H. Lo; H. Q. Hou; M. C. Wang; W. Lin

doi:10.1109/68.554153

1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

Y. Qian^*, Z. H. Zhu, Y. H. Lo, H. Q. Hou, M. C. Wang, W. Lin

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Journal Article › peer-review

34 Scopus citations

Abstract

We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-μm vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm² and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T₀ of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-μm VCSEL's.

Original language	English
Pages (from-to)	8-10
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/68.554153
State	Published - 01 1997

Keywords

Long wavelength
Optical communications
Optical data interconnects
Semiconductor lasers
VCSEL's
Wafer bonding

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10.1109/68.554153

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title = "1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors",

abstract = "We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-μm vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm2 and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T0 of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-μm VCSEL's.",

keywords = "Long wavelength, Optical communications, Optical data interconnects, Semiconductor lasers, VCSEL's, Wafer bonding",

author = "Y. Qian and Zhu, \{Z. H.\} and Lo, \{Y. H.\} and Hou, \{H. Q.\} and Wang, \{M. C.\} and W. Lin",

year = "1997",

month = jan,

doi = "10.1109/68.554153",

language = "英语",

volume = "9",

pages = "8--10",

journal = "IEEE Photonics Technology Letters",

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T1 - 1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

AU - Qian, Y.

AU - Zhu, Z. H.

AU - Lo, Y. H.

AU - Hou, H. Q.

AU - Wang, M. C.

AU - Lin, W.

PY - 1997/1

Y1 - 1997/1

N2 - We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-μm vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm2 and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T0 of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-μm VCSEL's.

AB - We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-μm vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm2 and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T0 of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-μm VCSEL's.

KW - Long wavelength

KW - Optical communications

KW - Optical data interconnects

KW - Semiconductor lasers

KW - VCSEL's

KW - Wafer bonding

UR - https://www.scopus.com/pages/publications/0030736344

U2 - 10.1109/68.554153

DO - 10.1109/68.554153

M3 - 文章

AN - SCOPUS:0030736344

SN - 1041-1135

VL - 9

SP - 8

EP - 10

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 1

ER -

1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

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Keywords

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