150-200 V split-gate trench power MOSFETs with multiple epitaxial layers

Feng Tso Chien*, Zhi Zhe Wang, Cheng Li Lin, Tsung Kuei Kang, Chii Wen Chen, Hsien Chin Chiu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations

Abstract

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide-semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron, sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron, sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron, sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron, sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

Original languageEnglish
Article number504
JournalMicromachines
Volume11
Issue number5
DOIs
StatePublished - 01 05 2020

Bibliographical note

Publisher Copyright:
© 2020 by the authors.

Keywords

  • Multiple epitaxial layers
  • Specific on-resistance
  • Split-gate trench power MOSFET

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