Abstract
A design of 18-20 GHz GaAs Monolithic Microwave Integrated Circuit (MMIC) 4-bit phase shifter is presented. The phase shifter adopts high-pass/low-pass type and switched filter networks. The passive HEMTs are used as key components for controlling the phase shift. All the drain and source terminals are DC grounded while the gates are applied with 0 V or-3 V. The power consumption is almost zero. The phase shifter obtains 9 ± 1 dB insertion loss and the input and output return losses are higher than 9.8 dB over the 18-20 GHz bandwidth of interest. The phase resolution is 22.5° with the root mean square (RMS) phase error is less than 5° within the bandwidth. The phase shifter is designed by using GaAs 0.15 μm process. The chip area is very compact, just about 2 mm ×1 mm, including all the pads.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 968-970 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781728135175 |
| DOIs | |
| State | Published - 12 2019 |
| Event | 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore Duration: 10 12 2019 → 13 12 2019 |
Publication series
| Name | Asia-Pacific Microwave Conference Proceedings, APMC |
|---|---|
| Volume | 2019-December |
Conference
| Conference | 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 |
|---|---|
| Country/Territory | Singapore |
| City | Singapore |
| Period | 10/12/19 → 13/12/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
Keywords
- GaAs 0.15 μm process
- GaAs MMIC
- Passive HEMTs
- Passive phase shifter
- Switch-type
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