2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

Xinke Liu; Hsien Chin Chiu; Hou Yu Wang; Cong Hu; Hsiang Chun Wang; Hsuan Ling Kao; Feng Tso Chien

doi:10.1109/JEDS.2018.2858294

2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

Xinke Liu, Hsien Chin Chiu^*, Hou Yu Wang, Cong Hu, Hsiang Chun Wang, Hsuan Ling Kao, Feng Tso Chien

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of 3.3-3.4 V, on/off current ratio of 2.7 × 10⁷, and ideal factor n of 2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m Ω cm² and a breakdown voltage V_BR of 2.4 kV, this device achieves a power device figure-of-merit V_BR 2R_on of 1.5 × 10⁹ V² Ω^-1 cm^-2.

Original language	English
Article number	8417418
Pages (from-to)	825-829
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2858294
State	Published - 20 07 2018

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Publisher Copyright:
© 2013 IEEE.

Keywords

Free standing gallium nitride (GaN)
high breakdown voltage
power p-n diode

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10.1109/JEDS.2018.2858294

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@article{1fdbcd200eb4445b9c335529fd91cf6e,

title = "2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials",

abstract = "This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of 3.3-3.4 V, on/off current ratio of 2.7 × 107, and ideal factor n of 2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m Ω cm2 and a breakdown voltage VBR of 2.4 kV, this device achieves a power device figure-of-merit VBR 2Ron of 1.5 × 109 V2 Ω-1 cm-2.",

keywords = "Free standing gallium nitride (GaN), high breakdown voltage, power p-n diode",

author = "Xinke Liu and Chiu, {Hsien Chin} and Wang, {Hou Yu} and Cong Hu and Wang, {Hsiang Chun} and Kao, {Hsuan Ling} and Chien, {Feng Tso}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2018",

month = jul,

day = "20",

doi = "10.1109/JEDS.2018.2858294",

language = "英语",

volume = "6",

pages = "825--829",

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T1 - 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

AU - Liu, Xinke

AU - Chiu, Hsien Chin

AU - Wang, Hou Yu

AU - Hu, Cong

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chien, Feng Tso

PY - 2018/7/20

Y1 - 2018/7/20

N2 - This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of 3.3-3.4 V, on/off current ratio of 2.7 × 107, and ideal factor n of 2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m Ω cm2 and a breakdown voltage VBR of 2.4 kV, this device achieves a power device figure-of-merit VBR 2Ron of 1.5 × 109 V2 Ω-1 cm-2.

AB - This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of 3.3-3.4 V, on/off current ratio of 2.7 × 107, and ideal factor n of 2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m Ω cm2 and a breakdown voltage VBR of 2.4 kV, this device achieves a power device figure-of-merit VBR 2Ron of 1.5 × 109 V2 Ω-1 cm-2.

KW - Free standing gallium nitride (GaN)

KW - high breakdown voltage

KW - power p-n diode

UR - http://www.scopus.com/inward/record.url?scp=85050375549&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2018.2858294

DO - 10.1109/JEDS.2018.2858294

M3 - 文章

AN - SCOPUS:85050375549

SN - 2168-6734

VL - 6

SP - 825

EP - 829

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 8417418

ER -

2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

Abstract

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Keywords

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