TY - GEN
T1 - 3D circuit model for 3D IC reliability study
AU - Tan, Cher Ming
AU - He, Feifei
PY - 2009
Y1 - 2009
N2 - 3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding materials and their materials properties, including their thermal conductivities, thermal expansivities, Young modulus, poisson ratio etc. Also, the architectural of the 3D IC will also affect the current density, temperature and thermomechanical stress distributions in the IC. In view of the above-mentioned, the electricalthermal- mechanical modeling of integrated circuit can no longer be done with a simple 2D model. The distributions of the current density, temperature and stress are important in determining the reliability of an IC. In this work we demonstrate a method of converting 2D circuit layout into a 3D model. Simulations under real circuit operating condition are carried out using both Cadence (a circuit simulator) and ANSYS (finite element tool). Limiting our study to the electromigration failure, we compute the current density, temperature and stress distributions of the interconnect layers by considering the heat transfer and Joule heating, and the "weak spot" for electromigration is identified. Layout design can be modified based on the simulation results so as to enhance the 3D circuit interconnect reliability.
AB - 3D integrated circuit technology is an emerging technology for the near future, and has received tremendous attention in the semiconductor community. With the 3D integrated circuit, the temperature and thermo-mechanical stress in the various parts of the IC are highly dependent on the surrounding materials and their materials properties, including their thermal conductivities, thermal expansivities, Young modulus, poisson ratio etc. Also, the architectural of the 3D IC will also affect the current density, temperature and thermomechanical stress distributions in the IC. In view of the above-mentioned, the electricalthermal- mechanical modeling of integrated circuit can no longer be done with a simple 2D model. The distributions of the current density, temperature and stress are important in determining the reliability of an IC. In this work we demonstrate a method of converting 2D circuit layout into a 3D model. Simulations under real circuit operating condition are carried out using both Cadence (a circuit simulator) and ANSYS (finite element tool). Limiting our study to the electromigration failure, we compute the current density, temperature and stress distributions of the interconnect layers by considering the heat transfer and Joule heating, and the "weak spot" for electromigration is identified. Layout design can be modified based on the simulation results so as to enhance the 3D circuit interconnect reliability.
UR - http://www.scopus.com/inward/record.url?scp=67650562329&partnerID=8YFLogxK
U2 - 10.1109/ESIME.2009.4938513
DO - 10.1109/ESIME.2009.4938513
M3 - 会议稿件
AN - SCOPUS:67650562329
SN - 9781424441617
T3 - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
BT - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
T2 - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
Y2 - 26 April 2009 through 29 April 2009
ER -