3D Electromigration Modelling for VLSI

Cher Ming Tan; Abdul Shabir; Debraj Banerjee

doi:10.1109/ICSICT55466.2022.9963434

3D Electromigration Modelling for VLSI

Cher Ming Tan^*, Abdul Shabir, Debraj Banerjee

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Electromigration is an important failure mechanism in VLSI interconnections since the inception of integrated circuits till now. The complexity of the underlying physics of electromigration is increasing as we advance in the technology nodes, and with the current FinFET technology, electromigration prediction must be designed in and hence, accurate electromigration prediction modeling becomes necessary. This work presents a recently developed electromigration prediction package which provides electromigration modeling in 3D and able to incorporate temperature gradient and thermo-mechanical stress gradient in the modeling. It can also model an entire circuit so that IC designers can apply the model to their designed circuits to optimize their design by locating the weak spots of electromigration in the layout design.

Original language	English
Title of host publication	Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Editors	Fan Ye, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665469067
DOIs	https://doi.org/10.1109/ICSICT55466.2022.9963434
State	Published - 2022
Event	16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 - Nanjing, China Duration: 25 10 2022 → 28 10 2022

Publication series

Name	Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Conference

Conference	16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Country/Territory	China
City	Nanjing
Period	25/10/22 → 28/10/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Access to Document

10.1109/ICSICT55466.2022.9963434

Cite this

Ming Tan, C., Shabir, A., & Banerjee, D. (2022). 3D Electromigration Modelling for VLSI. In F. Ye, & T.-A. Tang (Eds.), Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT55466.2022.9963434

Ming Tan, Cher ; Shabir, Abdul ; Banerjee, Debraj. / 3D Electromigration Modelling for VLSI. Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. editor / Fan Ye ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022).

@inproceedings{c80da92928f94199828490d8877aa03b,

title = "3D Electromigration Modelling for VLSI",

abstract = "Electromigration is an important failure mechanism in VLSI interconnections since the inception of integrated circuits till now. The complexity of the underlying physics of electromigration is increasing as we advance in the technology nodes, and with the current FinFET technology, electromigration prediction must be designed in and hence, accurate electromigration prediction modeling becomes necessary. This work presents a recently developed electromigration prediction package which provides electromigration modeling in 3D and able to incorporate temperature gradient and thermo-mechanical stress gradient in the modeling. It can also model an entire circuit so that IC designers can apply the model to their designed circuits to optimize their design by locating the weak spots of electromigration in the layout design.",

author = "\{Ming Tan\}, Cher and Abdul Shabir and Debraj Banerjee",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 ; Conference date: 25-10-2022 Through 28-10-2022",

year = "2022",

doi = "10.1109/ICSICT55466.2022.9963434",

language = "英语",

series = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Fan Ye and Ting-Ao Tang",

booktitle = "Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022",

address = "美国",

}

Ming Tan, C, Shabir, A & Banerjee, D 2022, 3D Electromigration Modelling for VLSI. in F Ye & T-A Tang (eds), Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, Institute of Electrical and Electronics Engineers Inc., 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, Nanjing, China, 25/10/22. https://doi.org/10.1109/ICSICT55466.2022.9963434

3D Electromigration Modelling for VLSI. / Ming Tan, Cher; Shabir, Abdul; Banerjee, Debraj.
Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. ed. / Fan Ye; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 3D Electromigration Modelling for VLSI

AU - Ming Tan, Cher

AU - Shabir, Abdul

AU - Banerjee, Debraj

PY - 2022

Y1 - 2022

N2 - Electromigration is an important failure mechanism in VLSI interconnections since the inception of integrated circuits till now. The complexity of the underlying physics of electromigration is increasing as we advance in the technology nodes, and with the current FinFET technology, electromigration prediction must be designed in and hence, accurate electromigration prediction modeling becomes necessary. This work presents a recently developed electromigration prediction package which provides electromigration modeling in 3D and able to incorporate temperature gradient and thermo-mechanical stress gradient in the modeling. It can also model an entire circuit so that IC designers can apply the model to their designed circuits to optimize their design by locating the weak spots of electromigration in the layout design.

AB - Electromigration is an important failure mechanism in VLSI interconnections since the inception of integrated circuits till now. The complexity of the underlying physics of electromigration is increasing as we advance in the technology nodes, and with the current FinFET technology, electromigration prediction must be designed in and hence, accurate electromigration prediction modeling becomes necessary. This work presents a recently developed electromigration prediction package which provides electromigration modeling in 3D and able to incorporate temperature gradient and thermo-mechanical stress gradient in the modeling. It can also model an entire circuit so that IC designers can apply the model to their designed circuits to optimize their design by locating the weak spots of electromigration in the layout design.

UR - https://www.scopus.com/pages/publications/85143971528

U2 - 10.1109/ICSICT55466.2022.9963434

DO - 10.1109/ICSICT55466.2022.9963434

M3 - 会议稿件

AN - SCOPUS:85143971528

T3 - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

BT - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

A2 - Ye, Fan

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

Y2 - 25 October 2022 through 28 October 2022

ER -

Ming Tan C, Shabir A, Banerjee D. 3D Electromigration Modelling for VLSI. In Ye F, Tang TA, editors, Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022). doi: 10.1109/ICSICT55466.2022.9963434

3D Electromigration Modelling for VLSI

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this