50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Don Kimball*, Paul Draxler, Jinho Jeong, Chin Hsia, Sandro Lanfranco, Walter Nagy, Kevin Linthicum, Larry Larson, Peter Asbeck

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

34 Scopus citations

Abstract

A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.

Original languageEnglish
Article numberLN.4
Pages (from-to)89-92
Number of pages4
JournalTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
DOIs
StatePublished - 2005
Externally publishedYes
Event2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States
Duration: 30 10 200502 11 2005

Keywords

  • Base station power amplifier
  • Digital predistortion
  • Efficiency
  • Envelope tracking
  • GaN HFET
  • WCDMA

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