50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Don Kimball; Paul Draxler; Jinho Jeong; Chin Hsia; Sandro Lanfranco; Walter Nagy; Kevin Linthicum; Larry Larson; Peter Asbeck

doi:10.1109/CSICS.2005.1531768

50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Don Kimball^*, Paul Draxler, Jinho Jeong, Chin Hsia, Sandro Lanfranco, Walter Nagy, Kevin Linthicum, Larry Larson, Peter Asbeck

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

34 Scopus citations

Abstract

A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.

Original language	English
Article number	LN.4
Pages (from-to)	89-92
Number of pages	4
Journal	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
DOIs	https://doi.org/10.1109/CSICS.2005.1531768
State	Published - 2005
Externally published	Yes
Event	2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States Duration: 30 10 2005 → 02 11 2005

Keywords

Base station power amplifier
Digital predistortion
Efficiency
Envelope tracking
GaN HFET
WCDMA

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10.1109/CSICS.2005.1531768

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title = "50% PAE WCDMA basestation amplifier implemented with GaN HFETs",

abstract = "A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.",

keywords = "Base station power amplifier, Digital predistortion, Efficiency, Envelope tracking, GaN HFET, WCDMA",

author = "Don Kimball and Paul Draxler and Jinho Jeong and Chin Hsia and Sandro Lanfranco and Walter Nagy and Kevin Linthicum and Larry Larson and Peter Asbeck",

year = "2005",

doi = "10.1109/CSICS.2005.1531768",

language = "英语",

pages = "89--92",

journal = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

issn = "1550-8781",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC ; Conference date: 30-10-2005 Through 02-11-2005",

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T1 - 50% PAE WCDMA basestation amplifier implemented with GaN HFETs

AU - Kimball, Don

AU - Draxler, Paul

AU - Jeong, Jinho

AU - Hsia, Chin

AU - Lanfranco, Sandro

AU - Nagy, Walter

AU - Linthicum, Kevin

AU - Larson, Larry

AU - Asbeck, Peter

PY - 2005

Y1 - 2005

N2 - A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.

AB - A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.

KW - Base station power amplifier

KW - Digital predistortion

KW - Efficiency

KW - Envelope tracking

KW - GaN HFET

KW - WCDMA

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DO - 10.1109/CSICS.2005.1531768

M3 - 会议文章

AN - SCOPUS:30944450427

SN - 1550-8781

SP - 89

EP - 92

JO - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

JF - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

M1 - LN.4

T2 - 2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Y2 - 30 October 2005 through 2 November 2005

ER -

50% PAE WCDMA basestation amplifier implemented with GaN HFETs

Abstract

Keywords

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