6 inch GaN on Si power devices for wireless charged health care system applications

H. C. Chiu; H. L. Kao; K. S. Chin; F. H. Huang

doi:10.1109/IMWS-BIO.2015.7303820

6 inch GaN on Si power devices for wireless charged health care system applications

H. C. Chiu, H. L. Kao, K. S. Chin, F. H. Huang

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The normally-off GaN on Si and GaN on SiC power devices including rectifier diode and HEMT were demonstrated in this study. GaN diode rectifiers was designed to be applied in a magnetic resonant coupling (MRC) for wireless power transfer system. The MRC is desired to operate at a high frequency in the Industry-Science-Medical (ISM) band such as 13.56 MHz. For reducing the power switching loss, the specific R_ON needs to be optimized. In addition, normally-off GaN HEMT was an important active device for this system. To achieve this property, the cascade architecture and p-GaN gate design were also proposed.

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	145-146
Number of pages	2
ISBN (Electronic)	9781479985432
DOIs	https://doi.org/10.1109/IMWS-BIO.2015.7303820
State	Published - 21 10 2015
Event	IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Taipei, Taiwan Duration: 21 09 2015 → 23 09 2015

Publication series

Name	2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings

Conference

Conference	IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015
Country/Territory	Taiwan
City	Taipei
Period	21/09/15 → 23/09/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

GaN on Si
HEMT
MRC
normally-off
rectifier

Access to Document

10.1109/IMWS-BIO.2015.7303820

Cite this

Chiu, H. C., Kao, H. L., Chin, K. S., & Huang, F. H. (2015). 6 inch GaN on Si power devices for wireless charged health care system applications. In 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings (pp. 145-146). Article 7303820 (2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-BIO.2015.7303820

Chiu, H. C. ; Kao, H. L. ; Chin, K. S. et al. / 6 inch GaN on Si power devices for wireless charged health care system applications. 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 145-146 (2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings).

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title = "6 inch GaN on Si power devices for wireless charged health care system applications",

abstract = "The normally-off GaN on Si and GaN on SiC power devices including rectifier diode and HEMT were demonstrated in this study. GaN diode rectifiers was designed to be applied in a magnetic resonant coupling (MRC) for wireless power transfer system. The MRC is desired to operate at a high frequency in the Industry-Science-Medical (ISM) band such as 13.56 MHz. For reducing the power switching loss, the specific RON needs to be optimized. In addition, normally-off GaN HEMT was an important active device for this system. To achieve this property, the cascade architecture and p-GaN gate design were also proposed.",

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author = "Chiu, \{H. C.\} and Kao, \{H. L.\} and Chin, \{K. S.\} and Huang, \{F. H.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 ; Conference date: 21-09-2015 Through 23-09-2015",

year = "2015",

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doi = "10.1109/IMWS-BIO.2015.7303820",

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Chiu, HC , Kao, HL , Chin, KS & Huang, FH 2015, 6 inch GaN on Si power devices for wireless charged health care system applications. in 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings., 7303820, 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 145-146, IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015, Taipei, Taiwan, 21/09/15. https://doi.org/10.1109/IMWS-BIO.2015.7303820

6 inch GaN on Si power devices for wireless charged health care system applications. / Chiu, H. C.; Kao, H. L.; Chin, K. S. et al.
2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. p. 145-146 7303820 (2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 6 inch GaN on Si power devices for wireless charged health care system applications

AU - Chiu, H. C.

AU - Kao, H. L.

AU - Chin, K. S.

AU - Huang, F. H.

PY - 2015/10/21

Y1 - 2015/10/21

N2 - The normally-off GaN on Si and GaN on SiC power devices including rectifier diode and HEMT were demonstrated in this study. GaN diode rectifiers was designed to be applied in a magnetic resonant coupling (MRC) for wireless power transfer system. The MRC is desired to operate at a high frequency in the Industry-Science-Medical (ISM) band such as 13.56 MHz. For reducing the power switching loss, the specific RON needs to be optimized. In addition, normally-off GaN HEMT was an important active device for this system. To achieve this property, the cascade architecture and p-GaN gate design were also proposed.

AB - The normally-off GaN on Si and GaN on SiC power devices including rectifier diode and HEMT were demonstrated in this study. GaN diode rectifiers was designed to be applied in a magnetic resonant coupling (MRC) for wireless power transfer system. The MRC is desired to operate at a high frequency in the Industry-Science-Medical (ISM) band such as 13.56 MHz. For reducing the power switching loss, the specific RON needs to be optimized. In addition, normally-off GaN HEMT was an important active device for this system. To achieve this property, the cascade architecture and p-GaN gate design were also proposed.

KW - GaN on Si

KW - HEMT

KW - MRC

KW - normally-off

KW - rectifier

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BT - 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 21 September 2015 through 23 September 2015

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Chiu HC , Kao HL , Chin KS, Huang FH. 6 inch GaN on Si power devices for wireless charged health care system applications. In 2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. p. 145-146. 7303820. (2015 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications, IMWS-BIO 2015 - Proceedings). doi: 10.1109/IMWS-BIO.2015.7303820

6 inch GaN on Si power devices for wireless charged health care system applications

Abstract

Publication series

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Bibliographical note

Keywords

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