TY - GEN
T1 - A 10∼30-GHz CMOS distributed amplifier for UWB applications
AU - Chen, Chia Hsun
AU - Hsu, Hui Chen
AU - Feng, Wu Shiung
PY - 2010
Y1 - 2010
N2 - In this paper, a high bandwidth, low power consumption, and high gain-flatness distributed amplifier (DA) is presented. It is fabricated using a standard 0.13-μm CMOS process with six metal layers. The DA has a unity-gain cutoff frequency of 40GHz. The DA chip achieves measured results of 8dB gain, with a gain flatness of ±1-dB over the bandwidth of 10-30-GHz. And, the noise figure is between 4.2 and 5.7dB. Power consumption and current of the distributed amplifier are 25.2mW and 21mA at 1.2V supply voltage, respectively. Compared with traditional distributed amplifiers, using the cascade distributed amplifier can obtain more gain and better flatness.
AB - In this paper, a high bandwidth, low power consumption, and high gain-flatness distributed amplifier (DA) is presented. It is fabricated using a standard 0.13-μm CMOS process with six metal layers. The DA has a unity-gain cutoff frequency of 40GHz. The DA chip achieves measured results of 8dB gain, with a gain flatness of ±1-dB over the bandwidth of 10-30-GHz. And, the noise figure is between 4.2 and 5.7dB. Power consumption and current of the distributed amplifier are 25.2mW and 21mA at 1.2V supply voltage, respectively. Compared with traditional distributed amplifiers, using the cascade distributed amplifier can obtain more gain and better flatness.
UR - https://www.scopus.com/pages/publications/79953787246
U2 - 10.1109/ICMMT.2010.5524926
DO - 10.1109/ICMMT.2010.5524926
M3 - 会议稿件
AN - SCOPUS:79953787246
SN - 9781424457052
T3 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
SP - 266
EP - 269
BT - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
T2 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Y2 - 8 May 2010 through 11 May 2010
ER -