A 12-GHz low-phase-noise voltage-controlled oscillator using novel field-plate CMOS transistors

Chien Cheng Wei*, Hsien Chin Chiu, Wu Shiung Feng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-μm fieldplate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1/f noise) than the standard transistors because electron flow is suppressed in the deeper channel. Cross-coupled 12-GHz VCO with standard and FP transistors was simultaneously designed and fabricated in a TSMC 0.13-μm CMOS process. The measured phase noise of this novel design is -122 dBc/Hz at an offset frequency of 1 MHz. This novel design offered an average 5-dBc phase-noise improvement over the VCO with standard transistors at offset frequencies from 100 kHz to 1 MHz.

Original languageEnglish
Pages (from-to)2803-2807
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume54
Issue number10
DOIs
StatePublished - 10 2007

Keywords

  • 1/f noise
  • CMOS
  • Field-plate (FP) technology
  • Phase noise
  • Voltage-controlled oscillator (VCO)

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