Abstract
This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-μm fieldplate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1/f noise) than the standard transistors because electron flow is suppressed in the deeper channel. Cross-coupled 12-GHz VCO with standard and FP transistors was simultaneously designed and fabricated in a TSMC 0.13-μm CMOS process. The measured phase noise of this novel design is -122 dBc/Hz at an offset frequency of 1 MHz. This novel design offered an average 5-dBc phase-noise improvement over the VCO with standard transistors at offset frequencies from 100 kHz to 1 MHz.
Original language | English |
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Pages (from-to) | 2803-2807 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 54 |
Issue number | 10 |
DOIs | |
State | Published - 10 2007 |
Keywords
- 1/f noise
- CMOS
- Field-plate (FP) technology
- Phase noise
- Voltage-controlled oscillator (VCO)