A 2.1 to 6 GHz tunable-band LNA with adaptive frequency responses by transistor size scaling

Yu Hsiang Wang*, Kuan Ting Lin, Tao Wang, Hung Wei Chiu, Hsiao Chin Chen, Shey Shi Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

10 Scopus citations

Abstract

A 2.1 to 6 GHz tunable-band LNA by using transistor-size scaling technique is realized in 90 nm CMOS technology, which adopts a scalable-size transistor mimicked by the parallel-connected transistors with binary weighted device sizes. In the 16 programmable bands located in the frequencies of interest, the S21 varies in the range from 15.1 to 16.9 dB, and the NF is from 2.16 to 2.81 dB. This tunable -band LNA occupies only 0.23 mm2, which is readily compact compared with the prior arts of passive components switchable LNAs.

Original languageEnglish
Article number5456196
Pages (from-to)346-348
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number6
DOIs
StatePublished - 06 2010
Externally publishedYes

Keywords

  • Band switching
  • CMOS
  • Low noise amplifier (LNA)
  • Transistor size scaling
  • Wide band amplifier

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