A 3 to 5 GHz ultra-wideband low noise amplifier using InGaP/InGaAs enhancement-mode PHEMT technology

H. C. Chiu, C. S. Cheng, C. C. Wei, Y. J. Shih, S. W. Lin, F. T. Chien

Research output: Contribution to specialist publicationSpecialist publication Article

1 Scopus citations

Abstract

A In0.5Ga0.5p/InGaAa enhancement-mode (E-mode) pseudomorphic high electron mobility transistor (PHEMT), to demonstrate the performance of a 3-5 GHz ultra-wideband resistive shunt-feedback low noise amplifier (LNA). It was demonstrated that the resistive shunt-feedback achieves a wideband input matching, with a small noise figure (NF) degradation, as the Q-factor of the narrow band LNA input terminal was reduced. A low NF was demonstrated for the PHEMT LNA, as the In 0.5Ga 0.5P Schottky layer design provided low DX-center related defects and low oxidation rate with moisture. The measured results show a 15 dB gain from 3 to 5 GHz and the input/output losses are less than 10 dB. The minimum noise intercept point (IP3) of -8.5 dBm and an output third-order intercept point (OIP3) of 9.7 dBm were also obtained.

Original languageEnglish
Pages86-94
Number of pages9
Volume51
No6
Specialist publicationMicrowave Journal
StatePublished - 06 2008

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