A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology

Chih Sheng Yeh; Hsuan Ling Kao; Jiun Yi Ke; Bo Wen Wang; Cheng Lin Cho; Hsien Chin Chiu; Li Chun Chang

doi:10.1109/HSIC.2012.6213000

A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology

Chih Sheng Yeh^*, Hsuan Ling Kao, Jiun Yi Ke, Bo Wen Wang, Cheng Lin Cho, Hsien Chin Chiu, Li Chun Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 m GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of 17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are 47.9, 34.8 and 27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are 7 dBm and 17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm ².

Original language	English
Title of host publication	2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding
Pages	20-23
Number of pages	4
DOIs	https://doi.org/10.1109/HSIC.2012.6213000
State	Published - 2012
Event	2012 4th International High Speed Intelligent Communication Forum, HSIC 2012 - Nanjing, China Duration: 10 05 2012 → 11 05 2012

Publication series

Name	2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding

Conference

Conference	2012 4th International High Speed Intelligent Communication Forum, HSIC 2012
Country/Territory	China
City	Nanjing
Period	10/05/12 → 11/05/12

Access to Document

10.1109/HSIC.2012.6213000

Cite this

Yeh, C. S., Kao, H. L., Ke, J. Y., Wang, B. W., Cho, C. L., Chiu, H. C., & Chang, L. C. (2012). A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology. In 2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding (pp. 20-23). Article 6213000 (2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding). https://doi.org/10.1109/HSIC.2012.6213000

@inproceedings{d3856e04dbfd412da98a304bbd734520,

title = "A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology",

abstract = "This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 m GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of 17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are 47.9, 34.8 and 27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are 7 dBm and 17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm 2.",

author = "Yeh, {Chih Sheng} and Kao, {Hsuan Ling} and Ke, {Jiun Yi} and Wang, {Bo Wen} and Cho, {Cheng Lin} and Chiu, {Hsien Chin} and Chang, {Li Chun}",

year = "2012",

doi = "10.1109/HSIC.2012.6213000",

language = "英语",

isbn = "9781467306751",

series = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding",

pages = "20--23",

booktitle = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding",

note = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012 ; Conference date: 10-05-2012 Through 11-05-2012",

}

Yeh, CS, Kao, HL, Ke, JY, Wang, BW, Cho, CL, Chiu, HC & Chang, LC 2012, A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology. in 2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding., 6213000, 2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding, pp. 20-23, 2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Nanjing, China, 10/05/12. https://doi.org/10.1109/HSIC.2012.6213000

A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology. / Yeh, Chih Sheng; Kao, Hsuan Ling; Ke, Jiun Yi et al.
2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding. 2012. p. 20-23 6213000 (2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yeh, Chih Sheng

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AU - Cho, Cheng Lin

AU - Chiu, Hsien Chin

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N2 - This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 m GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of 17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are 47.9, 34.8 and 27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are 7 dBm and 17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm 2.

AB - This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 m GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of 17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are 47.9, 34.8 and 27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are 7 dBm and 17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm 2.

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A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology

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