@inproceedings{d3856e04dbfd412da98a304bbd734520,
title = "A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology",
abstract = "This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 m GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of 17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-IF, and RF-to-IF isolation are 47.9, 34.8 and 27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (IIP3) are 7 dBm and 17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm 2.",
author = "Yeh, \{Chih Sheng\} and Kao, \{Hsuan Ling\} and Ke, \{Jiun Yi\} and Wang, \{Bo Wen\} and Cho, \{Cheng Lin\} and Chiu, \{Hsien Chin\} and Chang, \{Li Chun\}",
year = "2012",
doi = "10.1109/HSIC.2012.6213000",
language = "英语",
isbn = "9781467306751",
series = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding",
pages = "20--23",
booktitle = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012, Proceeding",
note = "2012 4th International High Speed Intelligent Communication Forum, HSIC 2012 ; Conference date: 10-05-2012 Through 11-05-2012",
}