A 5-GHz-Band CMOS receiver with low LO self-mixing front end

Hsiao Chin Chen*, Tao Wang, Hung Wei Chiu, Yu Che Yang, Tze Huei Kao, Gou Wei Huang, Shey Shi Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

15 Scopus citations

Abstract

A 5.0-GHz-band monolithic direct-conversion receiver front end employing subharmonic mixers (SHMs) is demonstrated in 0.18-μm CMOS technology. Instead of using transistors as transconductors, the SHMs adopt on-chip 1:4 transformers to achieve voltage gain, and hence, excellent local-oscillator self-mixing suppression and good linearity can be obtained. Additionally, a CMOS-compatible postprocess is used to selectively remove the silicon substrate underneath the inductors and transformers of the receiver front end. While dissipating 43.9 mW from a 1.8-V supply, the micromachined receiver front end exhibits a voltage gain of 28.0 dB, a noise figure of 9.7 dB, a third-order input intercept point of -7.8 dBm at 5.0 GHz, and an input-referred dc offset of -118.0 dBm. The proposed receiver front end is further integrated with analog baseband circuits, a fractional-N frequency synthesizer, and a serial-to-parallel data converter to accomplish a multioperation-mode receiver.

Original languageEnglish
Pages (from-to)705-713
Number of pages9
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume56
Issue number4
DOIs
StatePublished - 2009
Externally publishedYes

Keywords

  • CMOS
  • Direct conversion
  • Front end
  • Local - oscillator (LO) self-mixing
  • Quadrature coupler
  • Receivers
  • Sub harmonic mixers (SHMs)
  • Transformers

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