A 50-mW, 386 GHz/mm2 wideband amplifier in 0.13-μm CMOS technology

Hsien Ku Chen*, Tao Wang, Kuan Ting Lin, Hsiao Chin Chen, Shey Shi Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A wideband amplifier with low power consumption (50 mW) and small chip size (0.44 mm2) is demonstrated in a 0.13 m CMOS technology. A power gain of 9.5 dB is measured with a 3 dB bandwidth covering from 0.1 GHz to 57 GHz as well as a gain-bandwidth-product (GBW) of 170 GHz. The proposed wideband amplifier has distinguished itself with the state-of-the-art performance of GBW/Pdiss (3.4 GHz/mW) and GBW/chiparea (386 GHz/mm2) [14], [67] which reveals its ability in accomplishing a wideband amplification with reasonable power and area consumptions.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages774-777
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 07 12 201010 12 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Country/TerritoryJapan
CityYokohama
Period07/12/1010/12/10

Keywords

  • CMOS integrated circuits
  • DA
  • GBW
  • distributed amplifier
  • matching
  • millimeter-wave
  • stacked inductor
  • wideband amplifier

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