A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Yue Ming Hsin; Tsung Yu Ke; Geng Yen Lee; Jen Inn Chyi; Hsien Chin Chiu

doi:10.1002/pssc.201100343

A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Yue Ming Hsin^*, Tsung Yu Ke, Geng Yen Lee, Jen Inn Chyi, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

National Central University

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm ²/V-s with a sheet carrier density of 9.8 × 10 ¹² cm ^-2 for the AlGaN/GaN structure. The specific on-state resistance (R _on) is 1.27 mΩ-cm ², while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm ² for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V _B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V _B) ²/R _on, is 302.7 MWcm ^-2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm ² to a reverse bias of 30 V with di /dt of 60 A/μs.

Original language	English
Pages (from-to)	949-952
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201100343
State	Published - 03 2012

Keywords

AlGaN
GaN
Reverse recovery time
Schottky barrier diode

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@article{e63a77ea60b046789885791e77b05e25,

title = "A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time",

abstract = "Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2/V-s with a sheet carrier density of 9.8 × 10 12 cm -2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2/R on, is 302.7 MWcm -2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di /dt of 60 A/μs.",

keywords = "AlGaN, GaN, Reverse recovery time, Schottky barrier diode",

author = "Hsin, {Yue Ming} and Ke, {Tsung Yu} and Lee, {Geng Yen} and Chyi, {Jen Inn} and Chiu, {Hsien Chin}",

year = "2012",

month = mar,

doi = "10.1002/pssc.201100343",

language = "英语",

volume = "9",

pages = "949--952",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

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TY - JOUR

T1 - A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

AU - Hsin, Yue Ming

AU - Ke, Tsung Yu

AU - Lee, Geng Yen

AU - Chyi, Jen Inn

AU - Chiu, Hsien Chin

PY - 2012/3

Y1 - 2012/3

N2 - Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2/V-s with a sheet carrier density of 9.8 × 10 12 cm -2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2/R on, is 302.7 MWcm -2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di /dt of 60 A/μs.

AB - Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2/V-s with a sheet carrier density of 9.8 × 10 12 cm -2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2/R on, is 302.7 MWcm -2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di /dt of 60 A/μs.

KW - AlGaN

KW - GaN

KW - Reverse recovery time

KW - Schottky barrier diode

UR - http://www.scopus.com/inward/record.url?scp=84858807385&partnerID=8YFLogxK

U2 - 10.1002/pssc.201100343

DO - 10.1002/pssc.201100343

M3 - 文章

AN - SCOPUS:84858807385

SN - 1862-6351

VL - 9

SP - 949

EP - 952

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

ER -

A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

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Keywords

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