A band selected 3.1-30.1 GHz distributed amplifier in 0.18-μm CMOS technology

Wu Shiung Feng, Chien Cheng Wei*, Hui Chen Hsu, Chia Hsun Chen, Prasenjit Chatterjee, Ling Kung

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

A band-selected 3.1-30.1 GHz CMOS distributed amplifier (DA) for extended UWB application is presented in this article. The proposed circuit was designed and fabricated with a 0.18-μm CMOS technology. This circuit uses a sharpening technique to improve the frequency response from low-pass to bandpass property, for the requirement of limited frequency band. This DA also adopts the inductive peaking technique to increase circuit's gain and bandwidth. This DA has a measured maximum power gain of 7.5 dB. The supply voltage and biasing current are 1.8 V and 28.6 mA, with total DC power of 51.48 mW. When compared with the standard DAs published over the past years, this circuit offers good abilities in band selectivity, acceptable power gain, low noise figures, and large-signal performances.

Original languageEnglish
Pages (from-to)1850-1853
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume53
Issue number8
DOIs
StatePublished - 08 2011
Externally publishedYes

Keywords

  • Distributed amplifier
  • Inductive peaking
  • Noise figure
  • Sharpening technique

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