A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology

Min Li Chou; Yi Qi Chiang; Hsien Chin Chiu; Fan Hsiu Huang

doi:10.1109/ICCPS.2015.7454127

A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology

Min Li Chou, Yi Qi Chiang, Hsien Chin Chiu, Fan Hsiu Huang

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental-and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.

Original language	English
Title of host publication	2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	197-199
Number of pages	3
ISBN (Electronic)	9781467365437
DOIs	https://doi.org/10.1109/ICCPS.2015.7454127
State	Published - 15 04 2016
Event	IEEE International Conference on Communication Problem-Solving, ICCP 2015 - Guilin, Guangxi, China Duration: 16 10 2015 → 18 10 2015

Publication series

Name	2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015

Conference

Conference	IEEE International Conference on Communication Problem-Solving, ICCP 2015
Country/Territory	China
City	Guilin, Guangxi
Period	16/10/15 → 18/10/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

GaN
MMIC
SiC. HEMT
broadband
high power
tripler

Access to Document

10.1109/ICCPS.2015.7454127

Cite this

Chou, M. L., Chiang, Y. Q., Chiu, H. C., & Huang, F. H. (2016). A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology. In 2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015 (pp. 197-199). Article 7454127 (2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCPS.2015.7454127

Chou, Min Li ; Chiang, Yi Qi ; Chiu, Hsien Chin et al. / A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology. 2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 197-199 (2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015).

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title = "A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology",

abstract = "A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental-and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.",

keywords = "GaN, MMIC, SiC. HEMT, broadband, high power, tripler",

author = "Chou, {Min Li} and Chiang, {Yi Qi} and Chiu, {Hsien Chin} and Huang, {Fan Hsiu}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Conference on Communication Problem-Solving, ICCP 2015 ; Conference date: 16-10-2015 Through 18-10-2015",

year = "2016",

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doi = "10.1109/ICCPS.2015.7454127",

language = "英语",

series = "2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015",

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Chou, ML, Chiang, YQ, Chiu, HC & Huang, FH 2016, A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology. in 2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015., 7454127, 2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015, Institute of Electrical and Electronics Engineers Inc., pp. 197-199, IEEE International Conference on Communication Problem-Solving, ICCP 2015, Guilin, Guangxi, China, 16/10/15. https://doi.org/10.1109/ICCPS.2015.7454127

A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology. / Chou, Min Li; Chiang, Yi Qi; Chiu, Hsien Chin et al.
2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 197-199 7454127 (2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental-and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.

AB - A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental-and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.

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Chou ML, Chiang YQ, Chiu HC, Huang FH. A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology. In 2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 197-199. 7454127. (2015 IEEE International Conference on Communication Problem-Solving, ICCP 2015). doi: 10.1109/ICCPS.2015.7454127

A broadband and high power frequency tripler using 0.5 μm GaN-on-SiC HEMT technology

Abstract

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Keywords

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