A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications

Chih Chun Shen; Fan Hsiu Huang; Cheng Kuo Lin; Hong Yeh Chang; Yi Jen Chan; Yu Chi Wang

doi:10.1109/APMC.2008.4958388

A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications

Chih Chun Shen^*, Fan Hsiu Huang, Cheng Kuo Lin, Hong Yeh Chang, Yi Jen Chan, Yu Chi Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A broadband stacked power amplifier using 2μm GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dualstacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42 %.

Original language	English
Title of host publication	Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
DOIs	https://doi.org/10.1109/APMC.2008.4958388
State	Published - 2008
Externally published	Yes
Event	2008 Asia Pacific Microwave Conference, APMC 2008 - Hong Kong, China Duration: 16 12 2008 → 20 12 2008

Publication series

Name	Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

Conference

Conference	2008 Asia Pacific Microwave Conference, APMC 2008
Country/Territory	China
City	Hong Kong
Period	16/12/08 → 20/12/08

Keywords

GaAs
HBT
Power amplifier (PA)
Stacked power amplifier

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10.1109/APMC.2008.4958388

Cite this

Shen, C. C., Huang, F. H., Lin, C. K., Chang, H. Y., Chan, Y. J., & Wang, Y. C. (2008). A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications. In Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008 Article 4958388 (Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008). https://doi.org/10.1109/APMC.2008.4958388

@inproceedings{f8dc602518404f6085e10b1b5fbf0a41,

title = "A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications",

abstract = "A broadband stacked power amplifier using 2μm GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dualstacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42 %.",

keywords = "GaAs, HBT, Power amplifier (PA), Stacked power amplifier",

author = "Shen, {Chih Chun} and Huang, {Fan Hsiu} and Lin, {Cheng Kuo} and Chang, {Hong Yeh} and Chan, {Yi Jen} and Wang, {Yu Chi}",

year = "2008",

doi = "10.1109/APMC.2008.4958388",

language = "英语",

isbn = "9781424426423",

series = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",

booktitle = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",

note = "2008 Asia Pacific Microwave Conference, APMC 2008 ; Conference date: 16-12-2008 Through 20-12-2008",

}

Shen, CC, Huang, FH, Lin, CK, Chang, HY, Chan, YJ & Wang, YC 2008, A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications. in Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008., 4958388, Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008, 2008 Asia Pacific Microwave Conference, APMC 2008, Hong Kong, China, 16/12/08. https://doi.org/10.1109/APMC.2008.4958388

A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications. / Shen, Chih Chun; Huang, Fan Hsiu; Lin, Cheng Kuo et al.
Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008. 2008. 4958388 (Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications

AU - Shen, Chih Chun

AU - Huang, Fan Hsiu

AU - Lin, Cheng Kuo

AU - Chang, Hong Yeh

AU - Chan, Yi Jen

AU - Wang, Yu Chi

PY - 2008

Y1 - 2008

N2 - A broadband stacked power amplifier using 2μm GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dualstacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42 %.

AB - A broadband stacked power amplifier using 2μm GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dualstacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42 %.

KW - GaAs

KW - HBT

KW - Power amplifier (PA)

KW - Stacked power amplifier

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U2 - 10.1109/APMC.2008.4958388

DO - 10.1109/APMC.2008.4958388

M3 - 会议稿件

AN - SCOPUS:69649099678

SN - 9781424426423

T3 - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

BT - Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

T2 - 2008 Asia Pacific Microwave Conference, APMC 2008

Y2 - 16 December 2008 through 20 December 2008

ER -

A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications

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