A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's

B. J. Sheu; P. K. Ko

doi:10.1109/EDL.1984.25999

A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's

B. J. Sheu, P. K. Ko

University of California at Berkeley

Research output: Contribution to journal › Journal Article › peer-review

58 Scopus citations

Abstract

A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel length. Measurements from two gate biases on devices of different channel lengths are sufficient to obtain a full characterization. In contrast to the channel-resistance method, the accuracy of the capacitance method is independent of the source-drain and contact series resistance. It can, therefore, be used for conventional as well as lightly-doped drain (LDD) devices. Channel length and gate-oxide thickness determined by this method are given for conventional and LDD MOSFET's. For conventional MOSFET's, the new method agrees with the traditional effective length measurements to better than 0.1 μm.

Original language	English
Pages (from-to)	491-493
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	11
DOIs	https://doi.org/10.1109/EDL.1984.25999
State	Published - 11 1984
Externally published	Yes

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10.1109/EDL.1984.25999

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title = "A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's",

abstract = "A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel length. Measurements from two gate biases on devices of different channel lengths are sufficient to obtain a full characterization. In contrast to the channel-resistance method, the accuracy of the capacitance method is independent of the source-drain and contact series resistance. It can, therefore, be used for conventional as well as lightly-doped drain (LDD) devices. Channel length and gate-oxide thickness determined by this method are given for conventional and LDD MOSFET's. For conventional MOSFET's, the new method agrees with the traditional effective length measurements to better than 0.1 μm.",

author = "Sheu, \{B. J.\} and Ko, \{P. K.\}",

year = "1984",

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doi = "10.1109/EDL.1984.25999",

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T1 - A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's

AU - Sheu, B. J.

AU - Ko, P. K.

PY - 1984/11

Y1 - 1984/11

N2 - A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel length. Measurements from two gate biases on devices of different channel lengths are sufficient to obtain a full characterization. In contrast to the channel-resistance method, the accuracy of the capacitance method is independent of the source-drain and contact series resistance. It can, therefore, be used for conventional as well as lightly-doped drain (LDD) devices. Channel length and gate-oxide thickness determined by this method are given for conventional and LDD MOSFET's. For conventional MOSFET's, the new method agrees with the traditional effective length measurements to better than 0.1 μm.

AB - A simple method for determining the channel length and in situ gate-oxide thickness of MOSFETs is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel length. Measurements from two gate biases on devices of different channel lengths are sufficient to obtain a full characterization. In contrast to the channel-resistance method, the accuracy of the capacitance method is independent of the source-drain and contact series resistance. It can, therefore, be used for conventional as well as lightly-doped drain (LDD) devices. Channel length and gate-oxide thickness determined by this method are given for conventional and LDD MOSFET's. For conventional MOSFET's, the new method agrees with the traditional effective length measurements to better than 0.1 μm.

UR - https://www.scopus.com/pages/publications/0021517809

U2 - 10.1109/EDL.1984.25999

DO - 10.1109/EDL.1984.25999

M3 - 文章

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SN - 0741-3106

VL - 5

SP - 491

EP - 493

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's

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