A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	Int. Electron Devices Meeting (IEDM) Tech. - San Francisco, California, USA Duration: 15 12 2008 → 17 12 2008

Conference	Int. Electron Devices Meeting (IEDM) Tech.
Period	15/12/08 → 17/12/08

Cite this

@conference{c3775517a69b415196f505fb6ee4f6d6,

title = "A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity",

author = "T. Chang and Hsuan-Ling Kao and Chen, \{Y. J.\} and Liu, \{S. L.\} and McAlister, \{S. P.\} and Albert Chin",

year = "2008",

language = "American English",

note = "Int. Electron Devices Meeting (IEDM) Tech. ; Conference date: 15-12-2008 Through 17-12-2008",

}