@inproceedings{68f1c1d226f04c3dafc6ec5e26b88ec4,
title = "A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity",
abstract = "We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.",
author = "T. Chang and Kao, {H. L.} and Chen, {Y. J.} and Liu, {S. L.} and McAlister, {S. P.} and Albert Chin",
year = "2008",
doi = "10.1109/IEDM.2008.4796724",
language = "英语",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}