A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

T. Chang; H. L. Kao; Y. J. Chen; S. L. Liu; S. P. McAlister; Albert Chin

doi:10.1109/IEDM.2008.4796724

A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

T. Chang^*
, H. L. Kao
, Y. J. Chen
, S. L. Liu
, S. P. McAlister
, Albert Chin

^*Corresponding author for this work

Department of Electronic Engineering

National Yang Ming Chiao Tung University
National Research Council of Canada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz f_max, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796724
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 12 2008 → 17 12 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

Access to Document

10.1109/IEDM.2008.4796724

Cite this

@inproceedings{68f1c1d226f04c3dafc6ec5e26b88ec4,

title = "A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity",

abstract = "We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52\% drain efficiency at 2.4 GHz.",

author = "T. Chang and Kao, \{H. L.\} and Chen, \{Y. J.\} and Liu, \{S. L.\} and McAlister, \{S. P.\} and Albert Chin",

year = "2008",

doi = "10.1109/IEDM.2008.4796724",

language = "英语",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Chang, T, Kao, HL, Chen, YJ, Liu, SL, McAlister, SP & Chin, A 2008, A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796724, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796724

A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity. / Chang, T.; Kao, H. L.; Chen, Y. J. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796724 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

AU - Chang, T.

AU - Kao, H. L.

AU - Chen, Y. J.

AU - Liu, S. L.

AU - McAlister, S. P.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.

AB - We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.

UR - https://www.scopus.com/pages/publications/64549128596

U2 - 10.1109/IEDM.2008.4796724

DO - 10.1109/IEDM.2008.4796724

M3 - 会议稿件

AN - SCOPUS:64549128596

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

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