A comprehensive semi-empirical mobility model for strained-Si N-MOSFETs

Nagarajan Raghavan*, Nam Hwang, Cher Ming Tan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A mobility model is developed for strained-Si N-MOSFETs accounting for the various mechanisms such as surface roughness scattering, optical phonon scattering and coulomb scattering that cause degradation in effective carrier mobility. The proposed semi-empirical model is in good agreement with experimental data for a wide range of temperatures, doping densities and Ge mole-fractions.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages139-142
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 2006
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 10 200626 10 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/TerritoryChina
CityShanghai
Period23/10/0626/10/06

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