@inproceedings{f0cdb1a4ba834615bd6892c0b9b9c24c,
title = "A comprehensive semi-empirical mobility model for strained-Si N-MOSFETs",
abstract = "A mobility model is developed for strained-Si N-MOSFETs accounting for the various mechanisms such as surface roughness scattering, optical phonon scattering and coulomb scattering that cause degradation in effective carrier mobility. The proposed semi-empirical model is in good agreement with experimental data for a wide range of temperatures, doping densities and Ge mole-fractions.",
author = "Nagarajan Raghavan and Nam Hwang and Tan, {Cher Ming}",
year = "2006",
doi = "10.1109/ICSICT.2006.306120",
language = "英语",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "139--142",
booktitle = "ICSICT-2006",
address = "美国",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}