A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology

Hsuan Ling Kao; Cheng Lin Cho; Ping Che Lee; Chi Lin Tseng; Yung Yu Chen; Hsien Chin Chiu

doi:10.1080/00207217.2016.1196750

A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology

Hsuan Ling Kao^*
, Cheng Lin Cho
, Ping Che Lee
, Chi Lin Tseng
, Yung Yu Chen
, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

National Tsing Hua University
Chang Gung University
Lunghwa University of Science and Technology

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range. The two continuous bands were achieved by using coupled inductors, and the fine-tuning is controlled by varactors. The low and high bands of the VCO were 2.77–3.11 GHz and 3–3.28 GHz, in the V_c range between 10 and 17 V, respectively, which corresponds to a 16.7% (510 MHz) tuning range. The lowest phase noise was −123 dBc/Hz at an offset frequency of 1 MHz, and the highest output power was 17.7 dBm using a 7.5-V power supply.

Original language	English
Pages (from-to)	228-237
Number of pages	10
Journal	International Journal of Electronics
Volume	104
Issue number	2
DOIs	https://doi.org/10.1080/00207217.2016.1196750
State	Published - 01 02 2017

Bibliographical note

Publisher Copyright:
© 2016 Informa UK Limited, trading as Taylor & Francis Group.

Keywords

Coupled inductor
GaN HEMT on Si
VCO
output power
phase noise
tuning range

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10.1080/00207217.2016.1196750

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title = "A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology",

abstract = "A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range. The two continuous bands were achieved by using coupled inductors, and the fine-tuning is controlled by varactors. The low and high bands of the VCO were 2.77{\textendash}3.11 GHz and 3{\textendash}3.28 GHz, in the Vc range between 10 and 17 V, respectively, which corresponds to a 16.7\% (510 MHz) tuning range. The lowest phase noise was −123 dBc/Hz at an offset frequency of 1 MHz, and the highest output power was 17.7 dBm using a 7.5-V power supply.",

keywords = "Coupled inductor, GaN HEMT on Si, VCO, output power, phase noise, tuning range",

author = "Kao, \{Hsuan Ling\} and Cho, \{Cheng Lin\} and Lee, \{Ping Che\} and Tseng, \{Chi Lin\} and Chen, \{Yung Yu\} and Chiu, \{Hsien Chin\}",

note = "Publisher Copyright: {\textcopyright} 2016 Informa UK Limited, trading as Taylor \& Francis Group.",

year = "2017",

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doi = "10.1080/00207217.2016.1196750",

language = "英语",

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TY - JOUR

T1 - A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology

AU - Kao, Hsuan Ling

AU - Cho, Cheng Lin

AU - Lee, Ping Che

AU - Tseng, Chi Lin

AU - Chen, Yung Yu

AU - Chiu, Hsien Chin

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range. The two continuous bands were achieved by using coupled inductors, and the fine-tuning is controlled by varactors. The low and high bands of the VCO were 2.77–3.11 GHz and 3–3.28 GHz, in the Vc range between 10 and 17 V, respectively, which corresponds to a 16.7% (510 MHz) tuning range. The lowest phase noise was −123 dBc/Hz at an offset frequency of 1 MHz, and the highest output power was 17.7 dBm using a 7.5-V power supply.

AB - A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range. The two continuous bands were achieved by using coupled inductors, and the fine-tuning is controlled by varactors. The low and high bands of the VCO were 2.77–3.11 GHz and 3–3.28 GHz, in the Vc range between 10 and 17 V, respectively, which corresponds to a 16.7% (510 MHz) tuning range. The lowest phase noise was −123 dBc/Hz at an offset frequency of 1 MHz, and the highest output power was 17.7 dBm using a 7.5-V power supply.

KW - Coupled inductor

KW - GaN HEMT on Si

KW - VCO

KW - output power

KW - phase noise

KW - tuning range

UR - https://www.scopus.com/pages/publications/84975704453

U2 - 10.1080/00207217.2016.1196750

DO - 10.1080/00207217.2016.1196750

M3 - 文章

AN - SCOPUS:84975704453

SN - 0020-7217

VL - 104

SP - 228

EP - 237

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 2

ER -

A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology

Abstract

Bibliographical note

Keywords

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