A differential difference amplifier for neural recording system with tunable low-frequency cutoff

Kai Wen Yao; Wei Chih Lin; Cihun Siyong Alex Gong; Yu Ying Lin; Muh Tian Shiue

doi:10.1109/EDSSC.2008.4760720

A differential difference amplifier for neural recording system with tunable low-frequency cutoff

Kai Wen Yao^*
, Wei Chih Lin
, Cihun Siyong Alex Gong
, Yu Ying Lin
, Muh Tian Shiue

^*Corresponding author for this work

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm² of chip area.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760720
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 08 12 2008 → 10 12 2008

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08/12/08 → 10/12/08

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10.1109/EDSSC.2008.4760720

Cite this

Yao, K. W., Lin, W. C., Gong, C. S. A., Lin, Y. Y., & Shiue, M. T. (2008). A differential difference amplifier for neural recording system with tunable low-frequency cutoff. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Article 4760720 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760720

@inproceedings{c35189ae86b241eaa7e55e3ee2311ba0,

title = "A differential difference amplifier for neural recording system with tunable low-frequency cutoff",

abstract = "This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm2 of chip area.",

author = "Yao, \{Kai Wen\} and Lin, \{Wei Chih\} and Gong, \{Cihun Siyong Alex\} and Lin, \{Yu Ying\} and Shiue, \{Muh Tian\}",

year = "2008",

doi = "10.1109/EDSSC.2008.4760720",

language = "英语",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Yao, KW, Lin, WC, Gong, CSA, Lin, YY & Shiue, MT 2008, A differential difference amplifier for neural recording system with tunable low-frequency cutoff. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760720, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/08. https://doi.org/10.1109/EDSSC.2008.4760720

A differential difference amplifier for neural recording system with tunable low-frequency cutoff. / Yao, Kai Wen; Lin, Wei Chih; Gong, Cihun Siyong Alex et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760720 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A differential difference amplifier for neural recording system with tunable low-frequency cutoff

AU - Yao, Kai Wen

AU - Lin, Wei Chih

AU - Gong, Cihun Siyong Alex

AU - Lin, Yu Ying

AU - Shiue, Muh Tian

PY - 2008

Y1 - 2008

N2 - This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm2 of chip area.

AB - This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm2 of chip area.

UR - https://www.scopus.com/pages/publications/63249119264

U2 - 10.1109/EDSSC.2008.4760720

DO - 10.1109/EDSSC.2008.4760720

M3 - 会议稿件

AN - SCOPUS:63249119264

SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

Yao KW, Lin WC, Gong CSA, Lin YY, Shiue MT. A differential difference amplifier for neural recording system with tunable low-frequency cutoff. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760720. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2008.4760720

A differential difference amplifier for neural recording system with tunable low-frequency cutoff

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