A distributed trans-impedance amplifier using InGaP/InGaAs enhancement-mode PHEMT technology

An optoelectronic device performs the transition between optical and electrical components. The transimpedance amplifiers the most suitable preamplifier configuration in optoelectronic receivers. The performance parameters of impedance conversion, gain, bandwidth and noise figure are very important for the trance impedance amplifier. This optoelectronic transition is necessary to transform the optical device varies significantly in microwave circuits. The optoelectronic signals are relatively low at the first stage of receiver module, and it is necessary to increase their amplitude in the optoelectronic system. Therefore, a trans-impedance amplifier was developed, which provides gain as well as impedance transformation and converts the photocurrent into a voltage. The InGaP/InGaAs E-mode PHEMT offers an excellent selective etching for the gate recess between the InGaP and GaAs, which increases the manufacturability.