TY - JOUR
T1 - A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT
AU - Huang, Fan Hsiu
AU - Hsin, Yue Ming
PY - 2014/1
Y1 - 2014/1
N2 - A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5 μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49 GHz, and the frequency tuning range is adjustable from 48.7 GHz to 49.7 GHz with an output power of 8 dBm. By injecting a 2nd-order (~24.5 GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6 GHz can be approached at an input power of 11 dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3 GHz), an output locking range of 2.9 GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are -101 and -100 dBc/Hz, respectively, at 100-kHz offset frequency.
AB - A dual-gate subharmonic injection-locked oscillator (SILO) has been designed and fabricated in 0.5 μm GaAs PHEMT process for millimeter-wave communication applications. Specifically, this study proposes a dual-gate circuit topology to achieve a high-frequency oscillator with a large output signal power. The proposed dual-gate transistor also performs a wideband negative resistance characteristic by which the self-oscillation frequency can easily be determined with a proper resonator. The measured self-oscillation frequency of the proposed SILO is approximately 49 GHz, and the frequency tuning range is adjustable from 48.7 GHz to 49.7 GHz with an output power of 8 dBm. By injecting a 2nd-order (~24.5 GHz) subharmonic signal into the dual-gate SILO, the maximum locking range of 5.6 GHz can be approached at an input power of 11 dBm without any self-oscillation frequency tuning. With changing the input frequency to be a 3rd-order subharmonic injection (~16.3 GHz), an output locking range of 2.9 GHz also can be achieved. The measured phase noises of the output signals from 2nd- and 3rd-order subharmonic injections are -101 and -100 dBc/Hz, respectively, at 100-kHz offset frequency.
KW - Dual-gate
KW - Enhanced/depletion-mode PHEMT
KW - Injection locked oscillator
KW - Subharmonic injection locking
UR - http://www.scopus.com/inward/record.url?scp=84891148253&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2013.10.005
DO - 10.1016/j.mejo.2013.10.005
M3 - 文章
AN - SCOPUS:84891148253
SN - 0026-2692
VL - 45
SP - 89
EP - 94
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 1
ER -