A F-band balanced power amplifier in 0.15μm GaAs pHEMT process

Min Li Chou; Fan Hsiu Huang; Hsien Chin Chiu

doi:10.1109/ICCPS.2014.7062275

A F-band balanced power amplifier in 0.15μm GaAs pHEMT process

Min Li Chou, Fan Hsiu Huang, Hsien Chin Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The design of balanced power amplifier (PA) is proposed in this manuscript which is operated from 46.0 to 66.5 GHz. The circuit is fabricated in WIN 0.15 μm GaAs pHEMT process. The performance of circuit is designed for achieving high output power and broadband characteristics. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain of 10.0 dB. The maximum output power is up to 10 dBm. The total chip area including on-chip coupler is 1.16 × 0.79 mm².

Original language	English
Title of host publication	2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	289-290
Number of pages	2
ISBN (Electronic)	9781479942466
DOIs	https://doi.org/10.1109/ICCPS.2014.7062275
State	Published - 17 03 2014
Event	2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014 - Beijing, China Duration: 05 12 2014 → 07 12 2014

Publication series

Name	2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

Conference

Conference	2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014
Country/Territory	China
City	Beijing
Period	05/12/14 → 07/12/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Access to Document

10.1109/ICCPS.2014.7062275

Cite this

Chou, M. L., Huang, F. H., & Chiu, H. C. (2014). A F-band balanced power amplifier in 0.15μm GaAs pHEMT process. In 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014 (pp. 289-290). Article 7062275 (2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCPS.2014.7062275

@inproceedings{33c0e3d670044855a034de5d27f63a0f,

title = "A F-band balanced power amplifier in 0.15μm GaAs pHEMT process",

abstract = "The design of balanced power amplifier (PA) is proposed in this manuscript which is operated from 46.0 to 66.5 GHz. The circuit is fabricated in WIN 0.15 μm GaAs pHEMT process. The performance of circuit is designed for achieving high output power and broadband characteristics. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain of 10.0 dB. The maximum output power is up to 10 dBm. The total chip area including on-chip coupler is 1.16 × 0.79 mm2.",

author = "Chou, {Min Li} and Huang, {Fan Hsiu} and Chiu, {Hsien Chin}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014 ; Conference date: 05-12-2014 Through 07-12-2014",

year = "2014",

month = mar,

day = "17",

doi = "10.1109/ICCPS.2014.7062275",

language = "英语",

series = "2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "289--290",

booktitle = "2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014",

address = "美国",

}

Chou, ML, Huang, FH & Chiu, HC 2014, A F-band balanced power amplifier in 0.15μm GaAs pHEMT process. in 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014., 7062275, 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014, Institute of Electrical and Electronics Engineers Inc., pp. 289-290, 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014, Beijing, China, 05/12/14. https://doi.org/10.1109/ICCPS.2014.7062275

A F-band balanced power amplifier in 0.15μm GaAs pHEMT process. / Chou, Min Li; Huang, Fan Hsiu; Chiu, Hsien Chin.
2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 289-290 7062275 (2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A F-band balanced power amplifier in 0.15μm GaAs pHEMT process

AU - Chou, Min Li

AU - Huang, Fan Hsiu

AU - Chiu, Hsien Chin

PY - 2014/3/17

Y1 - 2014/3/17

N2 - The design of balanced power amplifier (PA) is proposed in this manuscript which is operated from 46.0 to 66.5 GHz. The circuit is fabricated in WIN 0.15 μm GaAs pHEMT process. The performance of circuit is designed for achieving high output power and broadband characteristics. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain of 10.0 dB. The maximum output power is up to 10 dBm. The total chip area including on-chip coupler is 1.16 × 0.79 mm2.

AB - The design of balanced power amplifier (PA) is proposed in this manuscript which is operated from 46.0 to 66.5 GHz. The circuit is fabricated in WIN 0.15 μm GaAs pHEMT process. The performance of circuit is designed for achieving high output power and broadband characteristics. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain of 10.0 dB. The maximum output power is up to 10 dBm. The total chip area including on-chip coupler is 1.16 × 0.79 mm2.

UR - http://www.scopus.com/inward/record.url?scp=84946685293&partnerID=8YFLogxK

U2 - 10.1109/ICCPS.2014.7062275

DO - 10.1109/ICCPS.2014.7062275

M3 - 会议稿件

AN - SCOPUS:84946685293

T3 - 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

SP - 289

EP - 290

BT - 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

Y2 - 5 December 2014 through 7 December 2014

ER -

Chou ML, Huang FH, Chiu HC. A F-band balanced power amplifier in 0.15μm GaAs pHEMT process. In 2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 289-290. 7062275. (2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014). doi: 10.1109/ICCPS.2014.7062275

A F-band balanced power amplifier in 0.15μm GaAs pHEMT process

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this