A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Yong Zhong Xiong; Geok Ing Ng; Hong Wang; Chee Leong Tan; J. S. Fu

doi:10.1109/22.993413

A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Yong Zhong Xiong^*, Geok Ing Ng, Hong Wang, Chee Leong Tan, J. S. Fu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.

Original language	English
Pages (from-to)	1109-1113
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	50
Issue number	4
DOIs	https://doi.org/10.1109/22.993413
State	Published - 04 2002
Externally published	Yes

Keywords

Common base
Common emitter
InP HBT
Noise figure
Noise parameters
Z-parameters

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10.1109/22.993413

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abstract = "A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.",

keywords = "Common base, Common emitter, InP HBT, Noise figure, Noise parameters, Z-parameters",

author = "Xiong, {Yong Zhong} and Ng, {Geok Ing} and Hong Wang and Tan, {Chee Leong} and Fu, {J. S.}",

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AU - Wang, Hong

AU - Tan, Chee Leong

AU - Fu, J. S.

PY - 2002/4

Y1 - 2002/4

N2 - A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.

AB - A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.

KW - Common base

KW - Common emitter

KW - InP HBT

KW - Noise figure

KW - Noise parameters

KW - Z-parameters

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M3 - 文章

AN - SCOPUS:0036539363

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JO - IEEE Transactions on Microwave Theory and Techniques

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ER -

A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Abstract

Keywords

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