A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Yong Zhong Xiong; Geok Ing Ng; Hong Wang; Chee Leong Tan; J. S. Fu

doi:10.1109/22.993413

A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Yong Zhong Xiong^*
, Geok Ing Ng
, Hong Wang
, Chee Leong Tan
, J. S. Fu

^*Corresponding author for this work

IEEE
Nanyang Technological University
DSO National Laboratory, Singapore

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.

Original language	English
Pages (from-to)	1109-1113
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	50
Issue number	4
DOIs	https://doi.org/10.1109/22.993413
State	Published - 04 2002
Externally published	Yes

Keywords

Common base
Common emitter
InP HBT
Noise figure
Noise parameters
Z-parameters

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10.1109/22.993413

Cite this

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abstract = "A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.",

keywords = "Common base, Common emitter, InP HBT, Noise figure, Noise parameters, Z-parameters",

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AU - Tan, Chee Leong

AU - Fu, J. S.

PY - 2002/4

Y1 - 2002/4

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AB - A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.

KW - Common base

KW - Common emitter

KW - InP HBT

KW - Noise figure

KW - Noise parameters

KW - Z-parameters

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DO - 10.1109/22.993413

M3 - 文章

AN - SCOPUS:0036539363

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 4

ER -

A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Abstract

Keywords

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