A fully integrated and high linearity UWB LNA implemented with current-reused technique and using single-biasing voltage

Chin Lung Yang*, Wei Lin Hsieh, Yi Chyun Chiang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-μm technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10dB power gain, 3.9dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9mA from a 1.8V power supply.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2007 Conference Proceedings, EUMIC 2007 - 10th European Conference on Wireless Technology, ECWT 2007
Pages94-97
Number of pages4
DOIs
StatePublished - 2007
EventEuropean Microwave Week 2007, EuMW 2007 - 10th European Conference on Wireless Technology, ECWT 2007 - Munich, Germany
Duration: 08 10 200710 10 2007

Publication series

NameEuropean Microwave Week 2007 Conference Proceedings, EuMW 2007 - 10th European Conference on Wireless Technology, ECWT 2007

Conference

ConferenceEuropean Microwave Week 2007, EuMW 2007 - 10th European Conference on Wireless Technology, ECWT 2007
Country/TerritoryGermany
CityMunich
Period08/10/0710/10/07

Keywords

  • CMOS
  • Low-noise amplifier (LNA)
  • Miller effect
  • Shunt-shunt feedback
  • Ultra-wideband (UWB)

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