A fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology

Yu Tso Lin*, Tao Wang, Shey Shi Lu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is first reported. A new approach is proposed for input impedance matching at multiple frequencies concurrently. The experimental results showed that input return losses of-12.8 and -11.5 dB, voltage gains of 14.4 and 14.3 dB and noise figures of 2.5 and 3.0 dB were obtained at 2.3 GHz and 4.5 GHz, respectively, with an image rejection ratio of 26.1dB and power consumption of 11.9 mW. It is found that voltage gains, noise figures and image rejection ratio are improved due to the use of suspended inductors with same power consumption.

Original languageEnglish
Article number4252662
Pages (from-to)425-428
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
StatePublished - 2007
Externally publishedYes
Event2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007 - New Orleans, LA, United States
Duration: 27 05 200730 05 2007

Keywords

  • Dual-band
  • Inductors
  • LNA
  • Suspended

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