A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

Hsien Chin Chiu; Chia Shih Cheng; Hsuan Ling Kao; Jeffrey S. Fu; Qiang Cui; Juin J. Liou

doi:10.1016/j.microrel.2011.07.007

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

Hsien Chin Chiu^*, Chia Shih Cheng, Hsuan Ling Kao, Jeffrey S. Fu, Qiang Cui, Juin J. Liou

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.

Original language	English
Pages (from-to)	2137-2142
Number of pages	6
Journal	Microelectronics Reliability
Volume	51
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2011.07.007
State	Published - 12 2011

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title = "A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology",

abstract = "This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.",

author = "Chiu, \{Hsien Chin\} and Cheng, \{Chia Shih\} and Kao, \{Hsuan Ling\} and Fu, \{Jeffrey S.\} and Qiang Cui and Liou, \{Juin J.\}",

year = "2011",

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doi = "10.1016/j.microrel.2011.07.007",

language = "英语",

volume = "51",

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T1 - A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

AU - Chiu, Hsien Chin

AU - Cheng, Chia Shih

AU - Kao, Hsuan Ling

AU - Fu, Jeffrey S.

AU - Cui, Qiang

AU - Liou, Juin J.

PY - 2011/12

Y1 - 2011/12

N2 - This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.

AB - This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.

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U2 - 10.1016/j.microrel.2011.07.007

DO - 10.1016/j.microrel.2011.07.007

M3 - 文章

AN - SCOPUS:81855221829

SN - 0026-2714

VL - 51

SP - 2137

EP - 2142

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

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