A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor

Feng Tso Chien; Cheng Hao Yu; Chii Wen Chen; Ching Hwa Cheng; Tsung Kuei Kang; Hsien Chin Chiu

doi:10.1109/LED.2016.2566959

A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor

Feng Tso Chien
, Cheng Hao Yu
, Chii Wen Chen
, Ching Hwa Cheng
, Tsung Kuei Kang
, Hsien Chin Chiu

Department of Electronic Engineering

Feng Chia University
Ming Hsin University of Science and Technology Taiwan

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.

Original language	English
Article number	7468540
Pages (from-to)	886-889
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2566959
State	Published - 07 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Polycrystalline silicon thin-film transistor (poly-Si TFT)
double-gate
kink effect
raised source/drain (RSD)
split-channel

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10.1109/LED.2016.2566959

Cite this

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title = "A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor",

abstract = "In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.",

keywords = "Polycrystalline silicon thin-film transistor (poly-Si TFT), double-gate, kink effect, raised source/drain (RSD), split-channel",

author = "Chien, \{Feng Tso\} and Yu, \{Cheng Hao\} and Chen, \{Chii Wen\} and Cheng, \{Ching Hwa\} and Kang, \{Tsung Kuei\} and Chiu, \{Hsien Chin\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/LED.2016.2566959",

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volume = "37",

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journal = "IEEE Electron Device Letters",

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T1 - A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor

AU - Chien, Feng Tso

AU - Yu, Cheng Hao

AU - Chen, Chii Wen

AU - Cheng, Ching Hwa

AU - Kang, Tsung Kuei

AU - Chiu, Hsien Chin

PY - 2016/7

Y1 - 2016/7

N2 - In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.

AB - In this letter, a high-current kink effect free Z-gate polycrystalline silicon (poly-Si) thin-film transistor (ZG-TFT) is proposed and demonstrated. The ZG-TFT, which is formed by a raised source/drain (RSD) region and a split channel (SC) structure, reveals better device performance. Our experimental results show that the ON-current of ZG-TFT is about two times higher than that of a conventional single top gate TFT, and the leakage current is greatly reduced simultaneously. In addition, the high drain electric field is considerably reduced by the RSD structure, and the SC design can further effectively suppress the kink effect. Therefore, a better ON/OFF current ratio and a higher drain breakdown voltage can be achieved.

KW - Polycrystalline silicon thin-film transistor (poly-Si TFT)

KW - double-gate

KW - kink effect

KW - raised source/drain (RSD)

KW - split-channel

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DO - 10.1109/LED.2016.2566959

M3 - 文章

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JF - IEEE Electron Device Letters

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A High-Current Kink Effect Free Z-Gate Poly-Si Thin-Film Transistor

Abstract

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Keywords

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