A high isolation 0.15μm depletion-mode pHEMT SPDT switch using field-plate technology

Chia Shih Cheng, Shao Wei Lin*, Chien Cheng Wei, Hsien Chin Chiu, Rong Jyi Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A high isolation GaAs microwave switch has been successfully developed using field-plate technology, which is effective to improve the isolation. The developed wideband SPDT switch shows a greater than 40 dB isolation before 10GHz and also achieves good performance at higher frequency. A GaAs-based pseudomorphic high electron mobility transistors (pHEMTs) in which the field-plate (FP) metal is supplied with various biases was developed and evaluated experimentally to determine their dc and rf performance. Owing to the depth modulation of the field-plate-induced depletion region at various field-plate biases, the intrinsic devices were influenced by the tunable V fp. This technique is easy to apply, based on standard pHEMT fabrication.

Original languageEnglish
Title of host publication2007 Asia-Pacific Microwave Conference, APMC
DOIs
StatePublished - 2007
EventAsia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand
Duration: 11 12 200714 12 2007

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2007
Country/TerritoryThailand
CityBangkok
Period11/12/0714/12/07

Keywords

  • Field-Plate technology
  • High isolation
  • Millimeter-wave switch
  • pHEMT

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