A high-k Y2TiO5 charge trapping layer for high-density flash memory application

Tung Ming Pan; Wen Wei Yeh; Wei Tsung Chang; Kai Ming Chen; Jing Wei Chen; Kuo Chan Huang

doi:10.1109/ISDRS.2007.4422266

A high-k Y₂TiO₅ charge trapping layer for high-density flash memory application

Tung Ming Pan^*, Wen Wei Yeh, Wei Tsung Chang, Kai Ming Chen, Jing Wei Chen, Kuo Chan Huang

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422266
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 12 2007 → 14 12 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422266

Cite this

@inproceedings{0b42d8b8cfc04e04b5f22172579d9ce7,

title = "A high-k Y2TiO5 charge trapping layer for high-density flash memory application",

author = "Pan, {Tung Ming} and Yeh, {Wen Wei} and Chang, {Wei Tsung} and Chen, {Kai Ming} and Chen, {Jing Wei} and Huang, {Kuo Chan}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422266",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Pan, TM, Yeh, WW, Chang, WT, Chen, KM, Chen, JW & Huang, KC 2007, A high-k Y₂TiO₅ charge trapping layer for high-density flash memory application. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422266, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422266

A high-k Y₂TiO₅ charge trapping layer for high-density flash memory application. / Pan, Tung Ming; Yeh, Wen Wei; Chang, Wei Tsung et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422266 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high-k Y2TiO5 charge trapping layer for high-density flash memory application

AU - Pan, Tung Ming

AU - Yeh, Wen Wei

AU - Chang, Wei Tsung

AU - Chen, Kai Ming

AU - Chen, Jing Wei

AU - Huang, Kuo Chan

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949250087&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422266

DO - 10.1109/ISDRS.2007.4422266

M3 - 会议稿件

AN - SCOPUS:44949250087

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -