A high-linearity single-pole-double-throw pseudomorphic HEMT switch based on tunable field-plate voltage technology

Hsie Chen Chiu*, Chia Shih Cheng, Shao Wei Lin, Chien Cheng Wei

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations

Abstract

A high-isolation high-linearity GaAs pseudomorphic high-electron mobility transistor single-pole-double-throw microwave switch was developed using a tunable field-plate (FP) bias voltage technology. In this paper, a piece of FP metal was deposited between 0.15-μm-long gate and drain terminals. An extra FP-induced depletion region was generated to suppress the harmonics of switching associated with off-state operation. When switching into the on-state, the FP switch is associated with an insertion loss similar to that of the standard switch below 6 GHz. However, the isolation performance can be enhanced by 10 dB using an FP technology, which reduces the off-state capacitance that is produced by the extra FP-induced depletion region. The FP provides an additional mechanism to suppress the power of the second- and third-order harmonics in the off-state with slight on-state insertion-loss degradation.

Original languageEnglish
Pages (from-to)541-545
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume56
Issue number4
DOIs
StatePublished - 2009

Keywords

  • Field plate (FP)
  • High linearity
  • Microwave switch
  • Pseudomorphic high-electron mobility transistor (pHEMT)

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