Abstract
A high-isolation high-linearity GaAs pseudomorphic high-electron mobility transistor single-pole-double-throw microwave switch was developed using a tunable field-plate (FP) bias voltage technology. In this paper, a piece of FP metal was deposited between 0.15-μm-long gate and drain terminals. An extra FP-induced depletion region was generated to suppress the harmonics of switching associated with off-state operation. When switching into the on-state, the FP switch is associated with an insertion loss similar to that of the standard switch below 6 GHz. However, the isolation performance can be enhanced by 10 dB using an FP technology, which reduces the off-state capacitance that is produced by the extra FP-induced depletion region. The FP provides an additional mechanism to suppress the power of the second- and third-order harmonics in the off-state with slight on-state insertion-loss degradation.
Original language | English |
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Pages (from-to) | 541-545 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 56 |
Issue number | 4 |
DOIs | |
State | Published - 2009 |
Keywords
- Field plate (FP)
- High linearity
- Microwave switch
- Pseudomorphic high-electron mobility transistor (pHEMT)