A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu; Tien Sheng Chao; Wu Chin Peng; Wen Luh Yang; Jer Chyi Wang; Jian Hao Chen; Ming Wen Ma; Chao Sung Lai; Tsung Yu Yang; Tzu Ping Chen; Chien Hung Chen; Chih Hung Lin; Hwi Huang Chen; Joe Ko

doi:10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu^*
, Tien Sheng Chao
, Wu Chin Peng
, Wen Luh Yang
, Jer Chyi Wang
, Jian Hao Chen
, Ming Wen Ma
, Chao Sung Lai
, Tsung Yu Yang
, Tzu Ping Chen
, Chien Hung Chen
, Chih Hung Lin
, Hwi Huang Chen
, Joe Ko

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V_th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

Original language	English
Title of host publication	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378896
State	Published - 2007
Event	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 23 04 2007 → 25 04 2007

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	23/04/07 → 25/04/07

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10.1109/VTSA.2007.378896

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Wu, W. C., Chao, T. S., Peng, W. C., Yang, W. L., Wang, J. C., Chen, J. H., Ma, M. W., Lai, C. S., Yang, T. Y., Chen, T. P., Chen, C. H., Lin, C. H., Chen, H. H., & Ko, J. (2007). A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers Article 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378896

Wu, Woei Cherng ; Chao, Tien Sheng ; Peng, Wu Chin et al. / A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{f54dae6a5b8b412aa90d1fc2f24da5dc,

title = "A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness",

abstract = "High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.",

author = "Wu, \{Woei Cherng\} and Chao, \{Tien Sheng\} and Peng, \{Wu Chin\} and Yang, \{Wen Luh\} and Wang, \{Jer Chyi\} and Chen, \{Jian Hao\} and Ma, \{Ming Wen\} and Lai, \{Chao Sung\} and Yang, \{Tsung Yu\} and Chen, \{Tzu Ping\} and Chen, \{Chien Hung\} and Lin, \{Chih Hung\} and Chen, \{Hwi Huang\} and Joe Ko",

year = "2007",

doi = "10.1109/VTSA.2007.378896",

language = "英语",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Wu, WC, Chao, TS, Peng, WC, Yang, WL, Wang, JC, Chen, JH, Ma, MW, Lai, CS, Yang, TY, Chen, TP, Chen, CH, Lin, CH, Chen, HH & Ko, J 2007, A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. in 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239464, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 23/04/07. https://doi.org/10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. / Wu, Woei Cherng; Chao, Tien Sheng; Peng, Wu Chin et al.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

AU - Wu, Woei Cherng

AU - Chao, Tien Sheng

AU - Peng, Wu Chin

AU - Yang, Wen Luh

AU - Wang, Jer Chyi

AU - Chen, Jian Hao

AU - Ma, Ming Wen

AU - Lai, Chao Sung

AU - Yang, Tsung Yu

AU - Chen, Tzu Ping

AU - Chen, Chien Hung

AU - Lin, Chih Hung

AU - Chen, Hwi Huang

AU - Ko, Joe

PY - 2007

Y1 - 2007

N2 - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

AB - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

UR - https://www.scopus.com/pages/publications/34548863353

U2 - 10.1109/VTSA.2007.378896

DO - 10.1109/VTSA.2007.378896

M3 - 会议稿件

AN - SCOPUS:34548863353

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Wu WC, Chao TS, Peng WC, Yang WL, Wang JC, Chen JH et al. A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

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