@inproceedings{d7d747164a72421595475b3d9eca8f7d,
title = "A highly reliable NAND structure flash memory capable for low voltage operation",
abstract = "For the first time, a new flash cell called buried bit-line AND (BiAND) is proposed. Buried bit-line AND flash can achieve low voltage programming/erase. The major difference of the current flash cell from the conventional AND flash is the special design of a bit-line contact. With the use of the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between the word-line and bit-line such that lower voltage operation is feasible. Further, the comparison of the cell reliability for different schemes, i.e., high voltage F-N (HV F-N) and Bi F-N operation schemes, has been studied. Results show that BiAND scheme gives much better endurance and data retention characteristics. This makes it successful for a low voltage and high reliability design.",
author = "Lin, {Y. C.} and Lai, {C. S.} and Chung, {S. S.} and Evans Yang and S. Pittikoun and Tzeng, {S. M.} and Hsu, {C. C.H.}",
year = "2005",
language = "英语",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "666--667",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}